Polycrystalline CuISe2 thin films were deposited on glass substrate. The Hall effect discovered in the prepared films at various substrate and annealing temperatures, investigates the type of carriers, carrier concentration, and Hall mobility at room temperature. The thin films were n-type, the Hall mobility had the highest value (36.45 cm2/V.s) for films prepared with substrate temperature of 150°C and annealing temperature of 200°C and the lowest value (6.08 cm2/V.s) for films prepared films with substrate temperature of 350°C and annealing temperature of 400 °C (thickness of 1200Å). It was found that the substrate and annealing temperatures have changed the Hall mobility and carrier concentration.
