|ZnO/quartz heterostructure was deposited of a high purity Zn target in the presence of|
substrates temperatures. The optical properties and the optical constant of these film has
been investigated reaching to use for Optoelectronics applications, formed at 300 torr
oxygen ambient, showed an electrical resistivity of 0.0221 W.cm, without using postdeposition heat treatment. The Optical property shows high transparency 90 % and found
to decreases sharply with the decreasing of the temperatures of the substrate. The value of
the energy gap (Eg) of the prepared films is around 3.66 eV. The deposit films were
analyzed using the UV-visible.